InZnN3

ceramic

· InZnN3

InZnN3 is an experimental ternary nitride ceramic compound combining indium, zinc, and nitrogen. This material belongs to the wide-bandgap semiconductor and ceramic nitride family, currently investigated in research settings for optoelectronic and high-temperature applications. InZnN3 represents an emerging alternative within the III-nitride material system, with potential advantages in tuning bandgap energy and lattice parameters compared to binary nitrides like GaN or InN, though it remains largely in the development phase with limited commercial deployment.

wide-bandgap semiconductorsoptoelectronic devices (experimental)high-temperature electronicsUV/visible light emitters (research)power electronics (developmental)

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.8464	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.920	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InZnN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental