InWO2N

ceramic

· InWO2N

InWO₂N is an experimental ceramic compound combining indium, tungsten, oxygen, and nitrogen—a quaternary nitride oxide that belongs to the family of advanced refractory and semiconductor ceramics. This material is primarily of research interest for its potential in high-temperature applications and electronic devices where combined metal-nitride and metal-oxide phases could offer improved thermal stability, hardness, or electrical properties compared to binary alternatives. Industrial adoption remains limited; the material's relevance depends on specific dopants, microstructure, and processing methods that remain active areas of investigation in materials science and solid-state chemistry.

high-temperature refractory coatingssemiconductor researchadvanced ceramic substratesthermal barrier materialsexperimental catalystselectrical/electrochemical devices

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.00511	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.2800	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InWO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental