InTiO2N

semiconductor

· InTiO2N

InTiO₂N is an experimental oxynitride semiconductor combining indium, titanium, oxygen, and nitrogen phases—a mixed-valent compound being explored in photocatalysis and energy conversion research. Although not yet deployed in mainstream industrial production, this material family is of interest for visible-light-driven photocatalytic applications (water splitting, pollutant degradation) and potentially thin-film optoelectronic devices, where nitrogen doping of titanium dioxide-based systems can narrow the bandgap and improve solar response compared to pure TiO₂. Its development reflects broader efforts to engineer wide-bandgap semiconductors for environmental remediation and renewable energy, though practical processing routes and long-term stability remain active research questions.

photocatalytic water splittingenvironmental remediation & air purificationvisible-light photocatalyststhin-film optoelectronics (research phase)solar energy conversionresearch & development materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.2000	eV	—
Magnetic Moment(μB)	-0.000480	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.5000	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InTiO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control