InTeO2N

ceramic

· InTeO2N

InTeO2N is an experimental oxynitride ceramic combining indium, tellurium, oxygen, and nitrogen. This material belongs to the family of complex oxide-nitride ceramics currently under investigation for advanced optical and electronic applications. InTeO2N represents research-stage development aimed at tailoring bandgap, refractive index, and thermal properties beyond conventional oxide or nitride ceramics alone.

optical waveguidesphotonic deviceshigh-refractive-index coatingswide-bandgap semiconductorsthermal barrier research

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	-0.000211	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.060	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InTeO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental