InTeBr is a layered ceramic compound composed of indium, tellurium, and bromine, belonging to the family of mixed-halide metal chalcogenides. This is an experimental research material rather than a commercially established engineering ceramic; compounds in this family are of interest for their layered crystal structures and potential optoelectronic or ion-transport properties. Research on InTeBr and related mixed-anion semiconductors focuses on applications requiring tunable bandgaps, layered anisotropy, or ionic conductivity, making it relevant primarily to materials scientists and device engineers exploring next-generation semiconductors and functional ceramics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Exfoliation Energy(Eexf) | 93.93 | meV/atom | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.061 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.473 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -152.8 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.5509 | eV/atom | — |