InTaOFN

ceramic

· InTaOFN

InTaOFN is an experimental mixed-metal oxide ceramic compound containing indium, tantalum, oxygen, and fluorine—a research-phase material designed to combine the electronic and thermal properties of indium and tantalum oxides with fluorine doping for enhanced performance. This material family is being investigated primarily for photocatalytic, optoelectronic, and high-temperature dielectric applications where conventional oxides fall short. The fluorine incorporation is notable for potentially lowering band gaps and improving charge carrier mobility, making it of interest to researchers exploring next-generation semiconductors and catalysts, though production methods and scalability remain under development.

photocatalytic materials (experimental)optoelectronic devices (R&D)high-temperature dielectricsenvironmental remediation catalysts (water purification)thin-film semiconductor research

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.00000485	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.4400	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InTaOFN

Electrical Properties

Other Properties

Regulatory Screening

Environmental