InTaO3

semiconductor

· InTaO3

InTaO3 is an indium tantalum oxide compound belonging to the mixed-metal oxide semiconductor family, of interest primarily in research and emerging device applications. While not yet widely established in high-volume production, this material is being investigated for optoelectronic and photocatalytic applications due to the potentially favorable electronic and optical properties imparted by the tantalum and indium dopant combination. Engineers considering InTaO3 should note it remains largely experimental; selection would depend on specific research objectives in photocatalysis, thin-film electronics, or wide-bandgap semiconductor device development.

photocatalytic water splittingthin-film optoelectronicsvisible-light photocatalystssemiconductor researchwide-bandgap device development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.9000	eV	—
Magnetic Moment(μB)	-0.00000350	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.1600	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InTaO3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control