InSnOFN

ceramic

· InSnOFN

InSnOFN is an experimental transparent conducting oxide ceramic composed of indium, tin, oxygen, and fluorine/nitrogen dopants. This material is part of the wide-bandgap oxide semiconductor family being researched for next-generation optoelectronic and photovoltaic applications where conventional indium tin oxide (ITO) reaches performance limits. Its fluorine or nitrogen doping strategy aims to improve electrical conductivity, optical transparency, and thermal stability compared to standard indium oxide or tin oxide systems, making it relevant for researchers developing high-efficiency display technologies, solar cells, and transparent electronics where conventional TCO materials prove insufficient.

transparent conducting electrodesphotovoltaic devicesdisplay technologiesoptoelectronic componentsresearch and developmentnext-generation electronics

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.0000339	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.7400	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InSnOFN

Electrical Properties

Other Properties

Regulatory Screening

Environmental