InSnN3

ceramic

· InSnN3

InSnN3 is an experimental ternary nitride ceramic composed of indium, tin, and nitrogen, representing an emerging compound in the wide-bandgap semiconductor and ceramic material family. While not yet established in widespread commercial production, this material is being investigated in research contexts for potential applications in high-temperature electronics, optoelectronics, and advanced ceramic coatings, where the combination of elements may offer unique thermal stability or electrical properties distinct from binary nitrides like GaN or InN.

Research and developmentWide-bandgap semiconductorsHigh-temperature ceramicsOptoelectronic devicesAdvanced coatingsNext-generation electronics

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	2.643	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.740	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InSnN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental