InSiON2 is an inorganic ceramic compound in the indium–silicon–oxynitride family, designed to combine thermal stability and oxidation resistance with potential electronic or structural applications. While not a widely established commercial ceramic, materials in this composition space are of research interest for high-temperature coatings, diffusion barriers in semiconductor devices, and advanced structural ceramics where silicon nitride and indium oxide properties need to be balanced. Engineers would consider this material primarily in specialized aerospace, semiconductor, or extreme-environment contexts where conventional ceramics fall short.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.00161 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.060 | eV/atom | — |