InSiO2N

ceramic

· InSiO2N

InSiO₂N is an oxynitride ceramic composed of indium, silicon, oxygen, and nitrogen elements, belonging to the family of advanced ceramics used in high-temperature and electronic applications. This material is primarily investigated in research contexts for semiconductor devices, optical coatings, and high-temperature structural applications where the combination of refractory properties and electronic functionality is advantageous. Engineers consider oxynitride ceramics like InSiO₂N when conventional oxides or nitrides alone cannot meet simultaneous demands for thermal stability, chemical resistance, and electronic or photonic performance.

semiconductor device layershigh-temperature coatingsoptical/photonic applicationsresearch-phase materialselectronic packagingrefractory components

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	-0.00116	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.7800	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InSiO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental