InSe
semiconductorIndium selenide (InSe) is a III-VI layered semiconductor compound featuring a hexagonal crystal structure with naturally weak van der Waals interlayer bonding. While primarily a research material rather than an established industrial commodity, InSe is of significant interest in the emerging fields of two-dimensional (2D) electronics and optoelectronics, where it can be mechanically exfoliated into few-layer or monolayer forms. Engineers and researchers explore InSe for applications requiring direct bandgap semiconducting behavior, high carrier mobility, and tunable optical properties—particularly where the layered structure enables device miniaturization or integration into flexible/wearable platforms that conventional bulk semiconductors cannot readily achieve.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Exfoliation Energy(Eexf) | — | meV/atom | — | — | |
Poisson's Ratio(ν) | — | - | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | — | kg/m³ | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | — | eV | — | — | |
| ↳ | — | eV | — | — | |
Dielectric Constant (Relative Permittivity)(εr)2 entries | — | - | — | — | |
| ↳ | — | - | — | — | |
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | — | |
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | — | |
Magnetic Moment(μB) | — | µB | — | — | |
Piezoelectric Modulus(eij)2 entries | — | C/m² | — | — | |
| ↳ | — | C/m² | — | — | |
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | — | |
Seebeck Coefficient(S) | — | µV/K | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | — | eV/atom | — | — | |
Formation Energy(ΔHf)2 entries | — | eV/atom | — | — | |
| ↳ | — | eV/atom | — | — |