InSe₂N is an indium selenide nitride ceramic compound, representing an emerging class of mixed-anion semiconducting ceramics that combine elements from groups III, XVI, and XV of the periodic table. This material is primarily of research and development interest rather than established industrial production, with potential applications in optoelectronic and high-temperature ceramic systems where the unique combination of indium, selenium, and nitrogen bonding offers tailored electronic and thermal properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 4,471.5 | ksi | — | ||
Poisson's Ratio(ν) | 0.5000 | - | — | ||
Shear Modulus(G) | 165.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1921 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 4.244 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 1.378 | eV/atom | — | ||
Formation Energy(ΔHf) | 1.074 | eV/atom | — |