InScO₃ is an indium scandium oxide compound belonging to the rare-earth doped semiconductor family, synthesized primarily for research and developmental applications rather than established industrial production. This material is investigated for optoelectronic and photonic device applications, particularly in contexts where the combined properties of indium oxides and scandium doping might enable tunable bandgap, improved transparency, or enhanced conductivity compared to binary oxide alternatives. The material remains largely in the research phase, with potential relevance to transparent electronics, wide-bandgap semiconductors, and specialty optical coatings if performance metrics justify commercialization.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.332 | eV | — | ||
| ↳ | 0.3000 | eV | — | ||
Magnetic Moment(μB)2 entries | 0.000 | μB | — | ||
| ↳ | 0.000920 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -2.716 | eV/atom | — | ||
| ↳ | 0.5200 | eV/atom | — |