InScO₂N is an experimental oxynitride ceramic compound containing indium, scandium, oxygen, and nitrogen elements. This material belongs to the family of transition metal oxynitrides, which are studied for their potential to combine the hardness and thermal stability of ceramics with enhanced electrical or optical properties unavailable in purely oxide ceramics. Research on such materials focuses on applications requiring high-temperature stability, wear resistance, or semiconducting behavior, though InScO₂N remains largely in the research phase without established industrial production or widespread commercial deployment.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.9999 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.9200 | eV/atom | — |