InScN3

ceramic

· InScN3

InScN3 is a ternary nitride ceramic compound containing indium, scandium, and nitrogen, representing an emerging material in the wide-bandgap semiconductor and refractory ceramic family. This compound is primarily of research and development interest for next-generation electronic and optoelectronic devices, particularly where high thermal stability, wide bandgap properties, and nitride-based material systems are advantageous. InScN3 and related rare-earth/group-III nitrides are being explored as alternatives to conventional GaN and AlN in applications requiring enhanced performance at extreme temperatures or novel device architectures.

High-temperature electronicsWide-bandgap semiconductorsUV optoelectronicsRefractory coatingsNext-generation power devicesResearch and development

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	2.733	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.760	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InScN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental