InSbS is a ternary semiconductor ceramic compound combining indium, antimony, and sulfur, belonging to the family of III-V-VI semiconductors. This material is primarily investigated in research contexts for optoelectronic and photovoltaic applications, where its direct bandgap and tunable electronic properties offer potential advantages for infrared detectors, solar cells, and thermal imaging devices. InSbS represents an emerging alternative to conventional binary semiconductors, with the sulfur substitution potentially enabling bandgap engineering and improved thermal stability compared to traditional InSb compounds.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 114.6 | ksi | — | ||
Shear Modulus(G) | -85.57 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.08392 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 1.398 | eV/atom | — | ||
Formation Energy(ΔHf) | 1.008 | eV/atom | — |