InSbS
ceramic· JVASP-116209· InSbS
InSbS is a ternary semiconductor ceramic compound combining indium, antimony, and sulfur, belonging to the family of III-V-VI semiconductors. This material is primarily investigated in research contexts for optoelectronic and photovoltaic applications, where its direct bandgap and tunable electronic properties offer potential advantages for infrared detectors, solar cells, and thermal imaging devices. InSbS represents an emerging alternative to conventional binary semiconductors, with the sulfur substitution potentially enabling bandgap engineering and improved thermal stability compared to traditional InSb compounds.
infrared detectorsphotovoltaic researchthermal imaging sensorsoptoelectronic devicessemiconductor research
Compliance & Regulations
?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 790.0 | MPa | — | ||
Shear Modulus(G) | -590.0 | MPa | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 2.323 | kg/m³ | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 1.398 | eV/atom | — | ||
Formation Energy(ΔHf) | 1.008 | eV/atom | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.