InSb
semiconductorIndium antimonide (InSb) is a III-V semiconductor compound characterized by a narrow bandgap and high electron mobility, making it particularly valuable for infrared detection and high-frequency electronic applications. It is widely used in infrared photodetectors, thermal imaging sensors, and millimeter-wave devices where its superior carrier mobility and sensitivity to infrared radiation provide significant advantages over silicon or germanium alternatives. Engineers select InSb when low-temperature operation, fast response times, or detection in the mid- to far-infrared spectrum are critical requirements, though its more limited temperature stability and higher cost compared to conventional semiconductors restrict its use to specialized applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 5,133.4 | ksi | — | ||
| ↳ | 5,530.3 | ksi | — | ||
Poisson's Ratio(ν) | 0.2900 | - | — | ||
Shear Modulus(G)2 entries | 2,727.6 | ksi | — | ||
| ↳ | 2,865.9 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Thermal Conductivity(k) | 7.974 | BTU/(hr·ft·°F) | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1966 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.2200 | eV | — | ||
| ↳ | 0.06700 range 0.000–0.1340median of 2 measurements | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 22.92 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.7193 | C/m² | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.1581 | eV/atom | — | ||
| ↳ | -0.09369 | eV/atom | — |