InSb
semiconductorIndium antimonide (InSb) is a III-V semiconductor compound characterized by a narrow bandgap and high electron mobility, making it particularly valuable for infrared detection and high-frequency electronic applications. It is widely used in infrared photodetectors, thermal imaging sensors, and millimeter-wave devices where its superior carrier mobility and sensitivity to infrared radiation provide significant advantages over silicon or germanium alternatives. Engineers select InSb when low-temperature operation, fast response times, or detection in the mid- to far-infrared spectrum are critical requirements, though its more limited temperature stability and higher cost compared to conventional semiconductors restrict its use to specialized applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | — | ksi | — | — | |
| ↳ | — | ksi | — | — | |
Poisson's Ratio(ν) | — | - | — | — | |
Shear Modulus(G)2 entries | — | ksi | — | — | |
| ↳ | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Thermal Conductivity(k) | — | BTU/(hr·ft·°F) | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | — | lb/in³ | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | — | eV | — | — | |
| ↳ | — median of 2 measurements | eV | — | — | |
Dielectric Constant (Relative Permittivity)(εr) | — | - | — | — | |
Magnetic Moment(μB) | — | µB | — | — | |
Piezoelectric Modulus(eij) | — | C/m² | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | — | eV/atom | — | — | |
Formation Energy(ΔHf)2 entries | — | eV/atom | — | — | |
| ↳ | — | eV/atom | — | — |