InSb₂S₄Cl is a quaternary semiconductor compound combining indium, antimony, sulfur, and chlorine—a material primarily explored in research settings rather than established industrial production. This halide-chalcogenide compound belongs to the family of mixed-anion semiconductors, which are of interest for optoelectronic and photovoltaic applications due to their tunable bandgap and potential for enhanced light absorption compared to binary semiconductors. While not yet deployed in commercial devices at scale, InSb₂S₄Cl represents an emerging class of wide-bandgap semiconductors that researchers are investigating for applications requiring stable, efficient light–matter interaction in niche operating windows.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 36.79 | GPa | — | ||
Poisson's Ratio(ν) | 0.2900 | - | — | ||
Shear Modulus(G) | 20.73 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.379 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.800 | eV | — | ||
| ↳ | 1.579 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -176.7 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.5423 | eV/atom | — |