InSb2S4Br — Properties & Data | MatWorld

InSb2S4Br

Name: InSb2S4Br
Brand: MatWorld

semiconductor

· InSb2S4Br

InSb₂S₄Br is a quaternary semiconductor compound combining indium, antimony, sulfur, and bromine elements, belonging to the family of mixed-halide chalcogenides. This is a research-phase material under investigation for optoelectronic and photovoltaic applications, where the combination of heavy metal elements and variable halide/chalcogenide ratios can be tuned to achieve specific bandgap and carrier transport properties. The material represents an emerging platform for exploring non-traditional absorber layers and quantum-confined structures, with potential advantages in thin-film solar cells, infrared detectors, and solid-state light sources where conventional semiconductors (Si, GaAs, CdTe) present cost or performance trade-offs.

thin-film photovoltaic researchinfrared photodetectorsoptoelectronic device developmentbandgap engineeringnext-generation solar cellsquantum materials exploration

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	4.626	kg/m³	DFT · OptB88vdW

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)3 entries	1.549	eV	DFT · OptB88vdW
↳	2.220	eV	DFT · TBmBJ
↳	1.800	eV	Measured
Dielectric Constant (Relative Permittivity)(εr)	80.95	-	DFT · OptB88vdW
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	11.27	-	DFT · OptB88vdW
↳	8.306	-	DFT · TBmBJ
Piezoelectric Modulus(eij)	0.000	C/m²	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.00234	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00106	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-191.2	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	332.9	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	18.27	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.4975	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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InSb2S4Br

Physical Properties

Electrical Properties

Other Properties

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