InSb₂S₄Br is a quaternary semiconductor compound combining indium, antimony, sulfur, and bromine elements, belonging to the family of mixed-halide chalcogenides. This is a research-phase material under investigation for optoelectronic and photovoltaic applications, where the combination of heavy metal elements and variable halide/chalcogenide ratios can be tuned to achieve specific bandgap and carrier transport properties. The material represents an emerging platform for exploring non-traditional absorber layers and quantum-confined structures, with potential advantages in thin-film solar cells, infrared detectors, and solid-state light sources where conventional semiconductors (Si, GaAs, CdTe) present cost or performance trade-offs.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.626 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.800 | eV | — | ||
| ↳ | 1.549 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 80.95 | - | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -191.2 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.4975 | eV/atom | — |