InSb0.9As0.1

semiconductor

· InSb0.9As0.1

InSb₀.₉As₀.₁ is a III-V semiconductor alloy formed by substituting 10% arsenic into indium antimonide (InSb), creating a direct-bandgap compound semiconductor with tailored electronic properties between InSb and InAs. This alloy is primarily investigated for infrared optoelectronic devices and high-mobility transistor applications, where the bandgap engineering enables detection or emission in the mid-infrared spectrum while maintaining the excellent electron transport characteristics of the InSb parent material. The As-doping shifts the bandgap and lattice constant relative to pure InSb, making it valuable for lattice-matched heterostructures and as a research platform for tuning performance in infrared focal-plane arrays and magnetotransport studies at cryogenic temperatures.

infrared detectors and focal-plane arrayshigh-electron-mobility transistors (HEMT)mid-infrared optoelectronicsbandgap engineering researchheterojunction device developmentmagnetotransport and quantum well studies

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.2700	eV	—

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Regulatory Screening

Environmental

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InSb0.9As0.1

Electrical Properties

Regulatory Screening

Environmental

Export Control