InSb0.8As0.2

semiconductor

· InSb0.8As0.2

InSb₀.₈As₀.₂ is a III-V compound semiconductor alloy formed by substituting arsenic into indium antimonide, creating a tunable narrow-bandgap material. This composition sits in the indium antimonide family and is primarily of research interest for infrared optoelectronics and high-mobility device applications where fine control of bandgap energy is needed. The material enables detector and emitter designs operating in the mid-infrared spectral region, with potential advantages in thermoelectric devices and high-speed electronic applications where InSb's intrinsic properties require modification.

infrared photodetectorsmid-IR optoelectronicshigh-mobility semiconductorsthermoelectric devicesresearch/development applicationsnarrow-bandgap alloys

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.2100	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InSb0.8As0.2

Electrical Properties

Regulatory Screening

Environmental

Export Control