InSb0.6As0.4

semiconductor

· InSb0.6As0.4

InSb₀.₆As₀.₄ is a III–V semiconductor alloy composed of indium antimonide and indium arsenide in a 60:40 ratio, belonging to the narrow-bandgap III–V family. This material is engineered for infrared optoelectronic applications, particularly in the mid-to-long wavelength infrared range where its bandgap is tuned between bulk InSb and InAs. InSb₀.₆As₀.₄ is used in thermal imaging detectors, infrared focal plane arrays, and high-sensitivity photodiodes where operation in the 3–12 μm atmospheric window is critical; it offers superior carrier mobility and lower dark current compared to HgCdTe alternatives, making it attractive for space-qualified and military thermal sensing systems.

infrared detectorsthermal imaging sensorsfocal plane arraysspace opticsmilitary surveillanceIR photodiodes

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.1300	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InSb0.6As0.4

Electrical Properties

Regulatory Screening

Environmental

Export Control