InSb0.4As0.6

semiconductor

· InSb0.4As0.6

InSb₀.₄As₀.₆ is a III-V semiconductor alloy combining indium antimonide and indium arsenide in a 40:60 molar ratio, belonging to the narrow-bandgap family of compound semiconductors. This material is primarily explored in infrared detection and imaging applications, where its tunable bandgap (between InSb and InAs endmembers) enables sensitivity in the mid-wave to long-wave infrared spectrum. InSb₀.₄As₀.₆ represents an engineering trade-off between the higher mobility of InSb and the larger bandgap of InAs, making it a research-phase material for thermal imaging sensors, military surveillance systems, and scientific instrumentation where lattice-matched growth on InSb or InAs substrates is advantageous.

infrared detectors and focal plane arraysthermal imaging sensorsmilitary surveillance opticsscientific spectroscopy instrumentationnarrow-bandgap semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.1000	eV	—

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Regulatory Screening

Environmental

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InSb0.4As0.6

Electrical Properties

Regulatory Screening

Environmental

Export Control