InSb0.4As0.6
semiconductor· InSb0.4As0.6
InSb₀.₄As₀.₆ is a III-V semiconductor alloy combining indium antimonide and indium arsenide in a 40:60 molar ratio, belonging to the narrow-bandgap family of compound semiconductors. This material is primarily explored in infrared detection and imaging applications, where its tunable bandgap (between InSb and InAs endmembers) enables sensitivity in the mid-wave to long-wave infrared spectrum. InSb₀.₄As₀.₆ represents an engineering trade-off between the higher mobility of InSb and the larger bandgap of InAs, making it a research-phase material for thermal imaging sensors, military surveillance systems, and scientific instrumentation where lattice-matched growth on InSb or InAs substrates is advantageous.
infrared detectors and focal plane arraysthermal imaging sensorsmilitary surveillance opticsscientific spectroscopy instrumentationnarrow-bandgap semiconductors
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.