InSb0.3As0.7

semiconductor

· InSb0.3As0.7

InSb₀.₃As₀.₇ is a III-V semiconductor alloy combining indium antimonide and indium arsenide in a 30:70 ratio, belonging to the indium-based compound semiconductor family. This material is engineered for infrared and optoelectronic applications where its narrow bandgap enables detection and emission in the mid-infrared spectrum (approximately 3–5 μm wavelength range). InSb₀.₃As₀.₇ is valued in thermal imaging systems, infrared sensors, and military/aerospace surveillance where materials must operate at longer wavelengths than standard GaAs or InP, while offering better thermal stability and lattice matching than pure InSb for certain device architectures.

infrared detectorsthermal imaging sensorsmilitary surveillance systemsaerospace sensingphotovoltaic detectorsoptoelectronic devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.1100	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InSb0.3As0.7

Electrical Properties

Regulatory Screening

Environmental

Export Control