InSb0.1As0.9

semiconductor

· InSb0.1As0.9

InSb₀.₁As₀.₉ is a III-V semiconductor alloy composed primarily of indium arsenide (InAs) with a small substitution of antimony (Sb), forming a narrow-bandgap direct semiconductor. This material sits in the InAs-InSb alloy family and is primarily of research and specialized optoelectronic interest, chosen when the bandgap or lattice parameter needs fine-tuning relative to pure InAs for specific device requirements. The Sb addition to InAs increases the bandgap and can improve lattice matching to certain substrates, making it relevant for infrared detectors, quantum well structures, and high-mobility transistor applications where precise energy band engineering is critical.

infrared photodetectorsquantum well deviceshigh-electron-mobility transistors (HEMTs)mid-wave infrared sensingresearch/specialized optoelectronicslattice-matched heterostructures

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.1400	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InSb0.1As0.9

Electrical Properties

Regulatory Screening

Environmental

Export Control