InSb — Properties & Data | MatWorld

InSb

semiconductor

· InSb

Indium antimonide (InSb) is a III-V semiconductor compound characterized by a narrow bandgap and high electron mobility, making it particularly valuable for infrared detection and high-frequency electronic applications. It is widely used in infrared photodetectors, thermal imaging sensors, and millimeter-wave devices where its superior carrier mobility and sensitivity to infrared radiation provide significant advantages over silicon or germanium alternatives. Engineers select InSb when low-temperature operation, fast response times, or detection in the mid- to far-infrared spectrum are critical requirements, though its more limited temperature stability and higher cost compared to conventional semiconductors restrict its use to specialized applications.

infrared photodetectorsthermal imaging sensorsmillimeter-wave electronicshigh-frequency transistorscryogenic detector systemsspace-based instrumentation

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

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Method

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)2 entries	35.39	GPa	DFT
↳	38.13	GPa	DFT · OptB88vdW
Poisson's Ratio(ν)	0.2900	-	DFT · OptB88vdW
Shear Modulus(G)2 entries	18.81	GPa	DFT
↳	19.76	GPa	DFT · OptB88vdW

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Thermal Conductivity(k)	13.80	W/(m·K)	Measured

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Property	Value	Unit	Conditions	Source
Density(ρ)	5.442	kg/m³	DFT · OptB88vdW

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)3 entries	0.2200	eV	Measured
↳	0.000	eV	DFT · OptB88vdW
↳	0.1340	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)	22.92	-	DFT · OptB88vdW
High-Frequency Dielectric Constant (ε∞)(ε∞)	57.20	-	DFT · TBmBJ
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)	0.7193	C/m²	DFT · OptB88vdW
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	5.840	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Method

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)2 entries	-0.09369	eV/atom	DFT · OptB88vdW
↳	-0.1581	eV/atom	Measured

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.