InSb

semiconductor
· InSb

Indium antimonide (InSb) is a III-V semiconductor compound characterized by a narrow bandgap and high electron mobility, making it particularly valuable for infrared detection and high-frequency electronic applications. It is widely used in infrared photodetectors, thermal imaging sensors, and millimeter-wave devices where its superior carrier mobility and sensitivity to infrared radiation provide significant advantages over silicon or germanium alternatives. Engineers select InSb when low-temperature operation, fast response times, or detection in the mid- to far-infrared spectrum are critical requirements, though its more limited temperature stability and higher cost compared to conventional semiconductors restrict its use to specialized applications.

infrared photodetectorsthermal imaging sensorsmillimeter-wave electronicshigh-frequency transistorscryogenic detector systemsspace-based instrumentation

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Bulk Modulus(K)2 entries
35.39
GPa—
↳
38.13
GPa—
Poisson's Ratio(ν)
0.2900
-—
Shear Modulus(G)2 entries
18.81
GPa—
↳
19.76
GPa—
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Thermal Conductivity(k)
13.80
W/(m·K)—
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Density(ρ)
5.442
kg/m³—
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Band Gap(Eg)2 entries
0.2200
eV—
↳
0.06700
range 0.000–0.1340median of 2 measurements
eV—
Dielectric Constant (Relative Permittivity)(εr)
22.92
-—
Magnetic Moment(μB)
0.000
µB—
Piezoelectric Modulus(eij)
0.7193
C/m²—
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Energy Above Hull(ΔEhull)
0.000
eV/atom—
Formation Energy(ΔHf)2 entries
-0.1581
eV/atom—
↳
-0.09369
eV/atom—
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.