Indium sulfide (InS) is a III-VI direct bandgap semiconductor compound used primarily in optoelectronic and photovoltaic device research. It appears as a layered material with moderate mechanical stiffness and notably low exfoliation energy, making it amenable to exfoliation into thin-film or two-dimensional forms for advanced device applications. InS is of particular interest in emerging areas such as thin-film solar cells, photodetectors, and next-generation electronics where its bandgap properties and layer-dependent characteristics offer advantages over conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,531.7 | ksi | — | ||
Exfoliation Energy(Eexf) | 250.8 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.2400 | - | — | ||
Shear Modulus(G) | 3,435.9 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1807 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.070 | eV | — | ||
| ↳ | 1.037 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)3 entries | 15.16 | - | — | ||
| ↳ | 20.91 | - | — | ||
| ↳ | 14.75 range 10.59–18.91median of 2 measurements | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -137.8 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.6939 | eV/atom | — | ||
| ↳ | -0.5840 | eV/atom | — |