InS — Properties & Data | MatWorld

InS

Name: InS
Brand: MatWorld

semiconductor

· InS

Indium sulfide (InS) is a III-VI direct bandgap semiconductor compound used primarily in optoelectronic and photovoltaic device research. It appears as a layered material with moderate mechanical stiffness and notably low exfoliation energy, making it amenable to exfoliation into thin-film or two-dimensional forms for advanced device applications. InS is of particular interest in emerging areas such as thin-film solar cells, photodetectors, and next-generation electronics where its bandgap properties and layer-dependent characteristics offer advantages over conventional semiconductors.

thin-film photovoltaicsphotodetectors and optoelectronics2D material researchinfrared opticsemerging semiconductor devices

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?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	5,531.7	ksi	DFT · OptB88vdW
Exfoliation Energy(Eexf)	250.8	meV/atom	DFT · OptB88vdW
Poisson's Ratio(ν)	0.2400	-	DFT · OptB88vdW
Shear Modulus(G)	3,435.9	ksi	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	0.1807	lb/in³	DFT · OptB88vdW

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)3 entries	2.070	eV	Measured
↳	1.037	eV	DFT · OptB88vdW
↳	1.769	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)3 entries	20.91	-	DFT · OptB88vdW
↳	15.16	-	DFT · PBE
↳	14.75 range 10.59–18.91median of 2 measurements	-	DFT · PBEsol
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	10.61	-	DFT · OptB88vdW
↳	7.246	-	DFT · TBmBJ
Electronic Dielectric Tensor(ε∞)	Matrix (redacted)	-	DFT · PBE
Total Dielectric Tensor(ε)	Matrix (redacted)	-	DFT · PBE
Electron Effective Mass(m*e)	0.5833	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	0.9533	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)	0.000	C/m²	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.000928	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00134	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-137.8	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	222.9	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	27.92	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Method

Property	Value	Unit	Conditions
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)2 entries	-0.5840	eV/atom	DFT · OptB88vdW
↳	-0.6939	eV/atom	Measured

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InS

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