InS₂ is an indium sulfide ceramic compound belonging to the III-VI semiconductor family, characterized by a layered crystal structure similar to other transition metal dichalcogenides. While primarily explored in research contexts for optoelectronic and photovoltaic applications, InS₂ shows promise in photodetectors, solar cells, and light-emitting devices due to its semiconducting properties and tunable bandgap. Engineers consider this material when developing next-generation thin-film devices, particularly where solution-processable semiconductors or two-dimensional material derivatives are advantageous over conventional silicon or III-V compounds.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 8,597.8 | ksi | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.3000 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 4,184.3 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1755 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.2994 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.2051 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data