InS₂ is an indium sulfide ceramic compound belonging to the III-VI semiconductor family, characterized by a layered crystal structure similar to other transition metal dichalcogenides. While primarily explored in research contexts for optoelectronic and photovoltaic applications, InS₂ shows promise in photodetectors, solar cells, and light-emitting devices due to its semiconducting properties and tunable bandgap. Engineers consider this material when developing next-generation thin-film devices, particularly where solution-processable semiconductors or two-dimensional material derivatives are advantageous over conventional silicon or III-V compounds.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 59.28 | GPa | — | ||
Poisson's Ratio(ν) | 0.3000 | - | — | ||
Shear Modulus(G) | 28.85 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.859 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.2994 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.2051 | eV/atom | — |