InPbN3 is an experimental perovskite-related ceramic compound combining indium, lead, and nitrogen. This material belongs to the family of metal nitride perovskites, which are primarily investigated in research settings for optoelectronic and semiconductor applications due to their tunable bandgap and potential for high carrier mobility. InPbN3 remains largely in the exploratory phase, with potential relevance to next-generation photovoltaics, light-emission devices, and high-performance transistors, though its stability and scalability relative to established alternatives like GaN or conventional halide perovskites are still under evaluation.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 2.969 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 2.320 | eV/atom | — |