InP

semiconductor

· InP

Indium phosphide (InP) is a III-V direct-bandgap semiconductor compound used in high-speed optoelectronic and microwave applications where superior electron mobility and direct bandgap properties are required. It is the material of choice for high-frequency integrated circuits, infrared LEDs, photodetectors, and long-wavelength fiber-optic communications (particularly 1.3–1.55 μm window), where its performance advantages over silicon and GaAs become critical for speed and efficiency. Engineers select InP when conventional semiconductors cannot meet bandwidth, frequency, or spectral requirements, though its higher cost and greater brittleness than silicon limit adoption to performance-critical niches.

fiber-optic communicationshigh-frequency RF/microwave circuitsinfrared photodetectorsintegrated photonicssubmillimeter-wave electronicsspace and defense applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	8,658.8	ksi	DFT · OptB88vdW
Poisson's Ratio(ν)	0.2800	-	DFT · OptB88vdW
Shear Modulus(G)	4,647	ksi	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Thermal Conductivity(k)	49.23	BTU/(hr·ft·°F)	Measured

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	0.1656	lb/in³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Method

Carrier

Property	Value	Unit	Conditions	Source
Band Gap(Eg)3 entries	1.500	eV	Measured
↳	0.3310	eV	DFT · OptB88vdW
↳	1.387	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)2 entries	38.38	-	DFT · OptB88vdW
↳	18.26 range 16.73–19.78median of 2 measurements	-	DFT · PBEsol
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	23.59	-	DFT · OptB88vdW
↳	8.039	-	DFT · TBmBJ
Electron Effective Mass(m*e)	0.05000	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	0.1400	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)2 entries	1.010	C/m²	DFT · OptB88vdW
↳	0.05705	C/m²	DFT · PBE
Piezoelectric Stress Tensor(eij)	Matrix (redacted)	C/m²	DFT · PBE
Thermoelectric Power Factor(PF)2 entries	0.000146	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00320	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-29.47	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	259.2	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	33.85	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

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Method

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)2 entries	-0.2243	eV/atom	DFT · OptB88vdW
↳	-0.3902	eV/atom	Measured

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InP — Properties & Data | MatWorld