InP

Indium phosphide (InP) is a III-V direct-bandgap semiconductor compound used in high-speed optoelectronic and microwave applications where superior electron mobility and direct bandgap properties are required. It is the material of choice for high-frequency integrated circuits, infrared LEDs, photodetectors, and long-wavelength fiber-optic communications (particularly 1.3–1.55 μm window), where its performance advantages over silicon and GaAs become critical for speed and efficiency. Engineers select InP when conventional semiconductors cannot meet bandwidth, frequency, or spectral requirements, though its higher cost and greater brittleness than silicon limit adoption to performance-critical niches.