InP3 is an indium phosphide-based ceramic compound belonging to the III-V semiconductor family, though its exact phase composition and crystal structure require further clarification in technical literature. This material is primarily explored in research contexts for optoelectronic and high-frequency device applications, where indium phosphides are valued for direct bandgap properties, high electron mobility, and thermal stability. InP3 represents an emerging composition within the indium phosphorus system, potentially offering advantages in specialized semiconductor devices, though it remains less widely commercialized than more established III-V phases like binary InP.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1489 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | 24.92 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01660 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.09553 | eV/atom | — |