InP2S4

semiconductor

· InP2S4

InP₂S₄ is an indium phosphide sulfide compound semiconductor combining elements from both phosphide and sulfide material families, representing an emerging class of mixed-anion semiconductors still primarily in research and development stages. This material is being investigated for optoelectronic and photonic applications where tunable bandgap and mixed-anion engineering could enable devices spanning infrared to visible wavelengths, though it remains largely in exploratory research rather than established commercial production. Engineers considering this material should view it as a platform for next-generation semiconductor research rather than a mature engineering choice, with potential advantages in bandgap engineering and heterostructure design compared to conventional III-V or II-VI semiconductors.

research optoelectronicsphotonic integrated circuitsinfrared detectorsexperimental solar cellsbandgap engineeringheterostructure development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.750	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InP2S4

Electrical Properties

Regulatory Screening

Environmental

Export Control