InOsO₂F is a mixed-metal oxide fluoride ceramic compound containing indium, osmium, oxygen, and fluorine. This is a research-phase material in the family of complex oxide fluorides, studied primarily for its potential electrochemical and electronic properties rather than established commercial use. The incorporation of osmium and fluorine into an indium oxide matrix represents an exploratory composition likely targeted at catalytic, electrocatalytic, or solid-state electrochemistry applications where enhanced oxidation states and fluorine's electronic effects could be leveraged.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.5864 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.040 | eV/atom | — |