InNF is a ceramic compound in the indium nitride (InN) family, likely a nitride-based material engineered for electronic or optoelectronic applications. This material is primarily explored in research and advanced semiconductor contexts, where indium nitride compounds are valued for their wide direct bandgap, high electron mobility, and potential for high-frequency and high-power device applications. InNF may represent a fluorine-doped or fluorine-modified variant designed to optimize electrical conductivity, thermal stability, or interface properties compared to undoped indium nitride.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 20.47 | GPa | — | ||
Poisson's Ratio(ν) | 0.4100 | - | — | ||
Shear Modulus(G) | 10.94 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.175 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 1.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 1.366 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.1376 | eV/atom | — |