InNF2 is an indium nitride-based ceramic compound belonging to the III-V nitride ceramic family, which are wide-bandgap semiconductors and structural ceramics known for high hardness and thermal stability. While primarily investigated in materials research for optoelectronic and high-temperature applications, indium nitride ceramics show promise in specialized aerospace, defense, and next-generation power electronics contexts where extreme thermal environments and wear resistance are critical. Engineers considering this material should note it represents an emerging compound with active development in academic and advanced industrial settings rather than a commodity ceramic.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 97.38 | GPa | — | ||
Poisson's Ratio(ν) | 0.4800 | - | — | ||
Shear Modulus(G) | 43.75 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.656 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.9075 range 0.000–1.815median of 2 measurements | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 1.004 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.7535 | eV/atom | — |