InNbO2N

ceramic

· InNbO2N

InNbO₂N is an oxynitride ceramic compound combining indium, niobium, oxygen, and nitrogen phases. This is a research-stage material primarily explored for photocatalytic and electronic applications due to the mixed-valence properties and band-gap engineering potential of the indium–niobium oxide–nitride system. Industrial deployment remains limited; the material family is of interest in academic and emerging-technology contexts where visible-light photocatalysis, semiconductor heterostructures, or high-temperature dielectric performance are target requirements.

photocatalytic water splittingenvironmental remediation catalystssemiconductor researchvisible-light photocatalysisfunctional ceramic coatingsnext-generation electronics

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.0000466	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.3000	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InNbO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental