InNaN3 is an indium-based nitride ceramic compound with potential applications in semiconductor and advanced functional ceramics research. This material belongs to the wider family of group III nitrides, which are primarily explored for optoelectronic and high-temperature device applications, though InNaN3 itself remains largely in the experimental/research phase rather than established commercial production. Engineers would consider this material primarily in R&D contexts for next-generation semiconductors, high-frequency electronics, or extreme-environment applications where indium nitride's wide bandgap and thermal properties offer advantages over more conventional alternatives like GaN or AlN.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 5.853 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 3.100 | eV/atom | — |