InN

Indium nitride (InN) is a wide-bandgap III-V semiconductor compound with a hexagonal wurtzite crystal structure, belonging to the nitride family alongside GaN and AlN. It is primarily used in high-frequency and optoelectronic devices, particularly in RF power amplifiers, high-electron-mobility transistors (HEMTs), and emerging photovoltaic applications where its narrow bandgap (smaller than GaN) enables operation in the infrared spectrum. InN remains largely in research and early-stage commercialization phases compared to mature GaN technology, but its potential for tunable bandgap engineering in heterostructures and high-frequency applications at microwave and millimeter-wave frequencies makes it attractive for next-generation wireless and sensing systems.