InMnO₂N is an experimental oxynitride ceramic compound containing indium, manganese, oxygen, and nitrogen, representing a relatively unexplored composition within the broader family of transition metal oxynitrides. This material class is of research interest for potential applications in catalysis, energy storage, and semiconductor applications where the mixed anionic framework (combining oxide and nitride bonding) can create unique electronic and structural properties. InMnO₂N specifically may offer advantages over conventional oxides or nitrides alone through tunable band structure and enhanced catalytic activity, though it remains primarily in the development stage with limited industrial deployment.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 2.615 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.6400 | eV/atom | — |