InLaON2 is an oxynitride ceramic compound containing indium, lanthanum, oxygen, and nitrogen, representing a research-phase material within the broad family of rare-earth oxynitrides. This material class is being investigated for applications requiring high thermal stability, wide bandgap semiconducting behavior, or specialized optical properties, with potential advantages over conventional oxides in specific high-temperature or electronic applications. InLaON2 remains largely experimental; engineers should consult recent materials science literature to assess whether its properties meet project requirements compared to established alternatives like alumina or yttria-stabilized zirconia.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | -0.02067 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.880 | eV/atom | — |