InLaN3 is an indium-lanthanum nitride ceramic compound, representing an emerging material in the wider family of transition metal nitrides and rare-earth nitride systems. This is a research-phase compound with potential applications in high-temperature structural ceramics and electronic/photonic devices, though industrial adoption remains limited. The combination of indium and lanthanum in a nitride matrix suggests interest in exploring novel refractory properties, thermal stability, and possibly semiconducting or wide-bandgap electronic characteristics relevant to extreme-environment applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 2.124 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 2.100 | eV/atom | — |