InKN3 is an indium-based nitride ceramic compound belonging to the III-V nitride semiconductor family. This material is primarily investigated in research contexts for high-temperature and high-power electronic applications, where its wide bandgap and thermal stability offer potential advantages over conventional semiconductors. InKN3 represents an emerging material platform with promise for next-generation power devices and RF electronics, though industrial adoption remains limited compared to established alternatives like GaN and AlN.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 7.000 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 3.460 | eV/atom | — |