InIO — Properties & Data | MatWorld

InIO

ceramic

· JVASP-118545· InIO

InIO (indium oxide-based ceramic) is an inorganic oxide ceramic compound combining indium and oxygen, belonging to the family of transparent conducting oxides and wide-bandgap semiconductors. While primarily known in research and materials science contexts for optoelectronic and semiconductor applications, InIO serves niche roles where transparent conductivity, optical clarity, or high-temperature stability is required alongside ceramic robustness. Its industrial adoption remains limited compared to more established alternatives like ITO (indium tin oxide), but it is explored for next-generation displays, photovoltaic devices, and high-temperature electronic applications where compositional flexibility or cost optimization becomes critical.

transparent conductive coatingsoptoelectronic devicesthin-film photovoltaicshigh-temperature electronicsresearch and development materialssemiconductor substrates

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	6,333.8	ksi	DFT · OptB88vdW
Poisson's Ratio(ν)	0.2800	-	DFT · OptB88vdW
Shear Modulus(G)	3,376.5	ksi	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	0.2103	lb/in³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Filter by

Method

Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	0.8500	eV	DFT · OptB88vdW
↳	2.052	eV	DFT · TBmBJ
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	6.054	-	DFT · OptB88vdW
↳	4.487	-	DFT · TBmBJ
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	21.86	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.00840	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-1.142	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InIO

Mechanical Properties

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental