InInO3 is an indium oxide ceramic compound belonging to the family of transparent conducting oxides and wide-bandgap semiconductors. This material is primarily of research and development interest rather than established industrial production, with potential applications in optoelectronic devices, gas sensors, and next-generation transparent electronics where indium-based oxides offer tunable electrical and optical properties. InInO3 represents an experimental composition within the broader indium oxide materials family, with research focusing on its feasibility for high-temperature stability and selective sensing applications where conventional indium tin oxide (ITO) may have limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.2191 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.8800 | eV/atom | — |