InInO2S is a ternary ceramic compound containing indium, oxygen, and sulfur—a mixed-valence oxide-sulfide that belongs to the family of chalcogenide ceramics. This material is primarily of research interest rather than established industrial use, investigated for potential applications in optoelectronics and photocatalysis where mixed anion systems can offer tunable electronic properties and band gap engineering. Its potential advantages over single-phase alternatives include modified light absorption characteristics and possible enhanced catalytic activity, though engineering applications remain exploratory pending property optimization and synthesis scalability.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.5925 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.8200 | eV/atom | — |